0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BGA 7L1N6 E6327

BGA 7L1N6 E6327

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    TSNP-6

  • 描述:

    频率范围:-;IP1dB:-;增益:-;噪声系数:-;

  • 数据手册
  • 价格&库存
BGA 7L1N6 E6327 数据手册
BGA7L1N6 Silicon Germanium Low Noise Amplifier for LTE Data Sheet Revision 3.1 (Min/Max), 2014-02-11 RF & Protection Devices Edition 2014-02-11 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA7L1N6 Revision History Page or Item Subjects (major changes since previous revision) Revision 3.1 (Min/Max), 2014-02-11 10-15 Min/Max values added Revision 3.0, 2014-02-10 7 Marking added 10-15 Electrical characteristics updated 10-15 Footnotes updated Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANI ZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2 2.1 2.2 2.3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Measured RF Characteristics Band 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Measured RF Characteristics Band 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Measured RF Characteristics Band 17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 10 12 14 3 3.1 3.2 3.3 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Circuit Schematic Band 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Circuit Schematic Band 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Circuit Schematic Band 17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 16 17 18 4 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Data Sheet 4 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Data Sheet Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Application Schematic BGA7L1N6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Application Schematic BGA7L1N6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Application Schematic BGA7L1N6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Drawing of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Application Board Cross-Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 TSNP-6-2 Package Outline (top, side and bottom views) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Footprint Recommendation TSNP-6-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000) . . . . . . . . . . . . . . . . . . . . . . 21 5 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Data Sheet Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 869 - 894 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 869 - 894 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 925 - 960 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 925 - 960 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 734 - 746 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 734 - 746 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Revision 3.1 (Min/Max), 2014-02-11 Silicon Germanium Low Noise Amplifier for LTE BGA7L1N6 Features • • • • • • • • • • • • Insertion power gain: 13.3 dB Low noise figure: 0.90 dB Low current consumption: 4.4 mA Operating frequencies: 728 - 960 MHz Supply voltage: 1.5 V to 3.3 V Digital on/off switch (1V logic high level) Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2) B7HF Silicon Germanium technology RF output internally matched to 50 Ω Only 1 external SMD component necessary 2kV HBM ESD protection (including AI-pin) Pb-free (RoHS compliant) package VCC PON AI AO ESD GND BGA7L1N6_Blockdiagram.vsd Figure 1 Block Diagram Product Name Marking Package BGA7L1N6 C TSNP-6-2 Data Sheet 7 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 Features Description The BGA7L1N6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 728 MHz to 960 MHz. The LNA provides 13.3 dB gain and 0.90 dB noise figure at a current consumption of 4.4 mA in the application configuration described in Chapter 3. The BGA7L1N6 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.3 V supply voltage. Pin Definition and Function Table 1 Pin Definition and Function Pin No. Name Function 1 GND Ground 2 VCC DC supply 3 AO LNA output 4 GND Ground 5 AI LNA input 6 PON Power on control Data Sheet 8 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 Maximum Ratings 1 Maximum Ratings Table 2 Maximum Ratings Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Voltage at pin VCC VCC -0.3 – 3.6 V 1) Voltage at pin AI VAI -0.3 – 0.9 V – Voltage at pin AO VAO -0.3 – VCC + 0.3 V – Voltage at pin PON VPON -0.3 – VCC + 0.3 V – Voltage at pin GNDRF VGNDRF -0.3 – 0.3 V – Current into pin VCC ICC – – 16 mA – RF input power PIN – – 0 dBm – Total power dissipation, Ptot – – 60 mW – Junction temperature TJ – – 150 °C – Ambient temperature range TA -40 – 85 °C – Storage temperature range TSTG -65 – 150 °C – ESD capability all pins VESD_HBM – – 2000 V according to JESD22A-114 TS < tbd. °C2) 1) All voltages refer to GND-Node unless otherwise noted 2) TS is measured on the ground lead at the soldering point Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Thermal Resistance Table 3 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point RthJS tbd. 1) For calculation of RthJA please refer to Application Note Thermal Resistance K/W 1) Data Sheet 9 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 Electrical Characteristics 2 Electrical Characteristics 2.1 Measured RF Characteristics Band 5 Table 4 Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 869 - 894 MHz Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 1.5 – 3.3 V – Supply current ICC – 4.4 5.4 mA ON-mode – 0.2 3 μA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 5 10 μA ON-mode – – 1 μA OFF-mode |S21| 11.8 13.3 14.8 dB – NF – 0.9 1.5 dB ZS = 50 Ω RLin 10 25 – dB – 10 17 – dB – 1/|S12| 17 21 – dB – tS – 4 7 μs OFF- to ON-mode Inband input 1dB-compression IP1dB point3) -10 -6 – dBm – Inband input 3rd-order intercept IIP3 point6)3) -6 -1 – dBm f1 = 880 MHz f2 = f1 +/-1 MHz Stability5) – >1 – Power On voltage Vpon Power On current Ipon 2 Insertion power gain Noise figure 2) Input return loss 3) 3) Output return loss Reverse isolation RLout 3) 2 4)5) Power gain settling time 1) 2) 3) 4) 5) 6) k f = 20 MHz ... 10 GHz Based on the application described in chapter 3 PCB losses are subtracted Verification based on AQL; not 100% tested in production To be within 1 dB of the final gain Guaranteed by device design; not tested in production Input power = -30 dBm for each tone Data Sheet 10 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 Electrical Characteristics Table 5 Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 869 - 894 MHz Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 1.5 – 3.3 V – Supply current ICC – 4.5 5.5 mA ON-mode – 0.2 3 μA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 10 15 μA ON-mode – – 1 μA OFF-mode |S21| 11.8 13.3 14.8 dB – NF – 0.9 1.5 dB ZS = 50 Ω RLin 10 24 – dB – Output return loss RLout 10 15 – dB – Reverse isolation3) 1/|S12|2 18 22 – dB – tS – 3 6 μs OFF- to ON-mode Inband input 1dB-compression IP1dB point3) -7 -3 – dBm – Inband input 3rd-order intercept IIP3 point6)3) -5 0 – dBm f1 = 880 MHz f2 = f1 +/-1 MHz Stability5) – >1 – Power On voltage Vpon Power On current Ipon 2 Insertion power gain Noise figure 2) Input return loss 3) 3) 4)5) Power gain settling time 1) 2) 3) 4) 5) 6) k f = 20 MHz ... 10 GHz Based on the application described in chapter 3 PCB losses are subtracted Verification based on AQL; not 100% tested in production To be within 1 dB of the final gain Guaranteed by device design; not tested in production Input power = -30 dBm for each tone Data Sheet 11 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 Electrical Characteristics 2.2 Measured RF Characteristics Band 8 Table 6 Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 925 - 960 MHz Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 1.5 – 3.3 V – Supply current ICC – 4.4 5.4 mA ON-mode – 0.2 3 μA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 5 10 μA ON-mode – – 1 μA OFF-mode |S21| 11.5 13.0 14.5 dB – NF – 0.9 1.5 dB ZS = 50 Ω RLin 10 16 – dB – 10 25 – dB – 1/|S12| 17 21 – dB – tS – 4 7 μs OFF- to ON-mode Inband input 1dB-compression IP1dB point3) -10 -6 – dBm – Inband input 3rd-order intercept IIP3 point6)3) -4 +1 – dBm f1 = 940 MHz f2 = f1 +/-1 MHz Stability5) – >1 – Power On voltage Vpon Power On current Ipon 2 Insertion power gain Noise figure 2) Input return loss3) 3) Output return loss Reverse isolation RLout 3) 2 4)5) Power gain settling time 1) 2) 3) 4) 5) 6) k f = 20 MHz ... 10 GHz Based on the application described in chapter 3 PCB losses are subtracted Verification based on AQL; not 100% tested in production To be within 1 dB of the final gain Guaranteed by device design; not tested in production Input power = -30 dBm for each tone Data Sheet 12 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 Electrical Characteristics Table 7 Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 925 - 960 MHz Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 1.5 – 3.3 V – Supply current ICC – 4.5 5.5 mA ON-mode – 0.2 3 μA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 10 15 μA ON-mode – – 1 μA OFF-mode |S21| 11.6 13.1 14.6 dB – NF – 0.9 1.5 dB ZS = 50 Ω RLin 10 17 – dB – Output return loss RLout 10 23 – dB – Reverse isolation3) 1/|S12|2 17 21 – dB – tS – 3 6 μs OFF- to ON-mode Inband input 1dB-compression IP1dB point3) -6 -2 – dBm – Inband input 3rd-order intercept IIP3 point6)3) -3 +2 – dBm f1 = 940 MHz f2 = f1 +/-1 MHz Stability5) – >1 – Power On voltage Vpon Power On current Ipon 2 Insertion power gain Noise figure 2) Input return loss 3) 3) 4)5) Power gain settling time 1) 2) 3) 4) 5) 6) k f = 20 MHz ... 10 GHz Based on the application described in chapter 3 PCB losses are subtracted Verification based on AQL; not 100% tested in production To be within 1 dB of the final gain Guaranteed by device design; not tested in production Input power = -30 dBm for each tone Data Sheet 13 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 Electrical Characteristics 2.3 Measured RF Characteristics Band 17 Table 8 Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 734 - 746 MHz Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 1.5 – 3.3 V – Supply current ICC – 4.4 5.4 mA ON-mode – 0.2 3 μA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 5 10 μA ON-mode – – 1 μA OFF-mode |S21| 11.1 12.6 14.1 dB – NF – 0.9 1.5 dB ZS = 50 Ω RLin 6 9 – dB – 6 8 – dB – 1/|S12| 20 24 – dB – tS – 4 7 μs OFF- to ON-mode Inband input 1dB-compression IP1dB point3) -12 -8 – dBm – Inband input 3rd-order intercept IIP3 point6)3) -7 -2 – dBm f1 = 740 MHz f2 = f1 +/-1 MHz Stability5) – >1 – Power On voltage Vpon Power On current Ipon 2 Insertion power gain Noise figure 2) Input return loss3) 3) Output return loss Reverse isolation RLout 3) 2 4)5) Power gain settling time 1) 2) 3) 4) 5) 6) k f = 20 MHz ... 10 GHz Based on the application described in chapter 3 PCB losses are subtracted Verification based on AQL; not 100% tested in production To be within 1 dB of the final gain Guaranteed by device design; not tested in production Input power = -30 dBm for each tone Data Sheet 14 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 Electrical Characteristics Table 9 Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 734 - 746 MHz Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply voltage VCC 1.5 – 3.3 V – Supply current ICC – 4.5 5.5 mA ON-mode – 0.2 3 μA OFF-mode 1.0 – Vcc V ON-mode 0 – 0.4 V OFF-mode – 10 15 μA ON-mode – – 1 μA OFF-mode |S21| 11.1 12.6 14.1 dB – NF – 0.9 1.5 dB ZS = 50 Ω RLin 6 9 – dB – Output return loss RLout 6 8 – dB – Reverse isolation3) 1/|S12|2 21 25 – dB – tS – 3 6 μs OFF- to ON-mode Inband input 1dB-compression IP1dB point3) -10 -6 – dBm – Inband input 3rd-order intercept IIP3 point6)3) -7 -2 – dBm f1 = 740 MHz f2 = f1 +/-1 MHz Stability5) – >1 – Power On voltage Vpon Power On current Ipon 2 Insertion power gain Noise figure 2) Input return loss 3) 3) 4)5) Power gain settling time 1) 2) 3) 4) 5) 6) k f = 20 MHz ... 10 GHz Based on the application described in chapter 3 PCB losses are subtracted Verification based on AQL; not 100% tested in production To be within 1 dB of the final gain Guaranteed by device design; not tested in production Input power = -30 dBm for each tone Data Sheet 15 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 Application Information 3 Application Information 3.1 Application Circuit Schematic Band 5 N1 BGA7L1N6 GNDRF, 4 RFIN Band 5 C1 1nF (optional) AO, 3 L1 20nH AI, 5 PON PON, 6 RFOUT Band 5 VCC VCC, 2 C2 1nF (optional) GND, 1 BGA7L1N6_B5_Schematic.vsd Figure 2 Application Schematic BGA7L1N6 Table 10 Bill of Materials Name Part Type Package Manufacturer Function C1 (optional) Chip capacitor 0402 Various DC block 1) C2 (optional) ≥ 1nF2) 0402 Various RF bypass 3) L1 Chip inductor 0402 Murata LQW type Input matching N1 BGA7L1N6 TSNP-6-2 Infineon SiGe LNA 1) DC block might be realized with pre-filter in LTE applications 2) For data sheet characteristics 1nF used 3) RF bypass recommended to mitigate power supply noise A list of all application notes is available at http://www.infineon.com/gpslna.appnotes. Data Sheet 16 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 Application Information 3.2 Application Circuit Schematic Band 8 N1 BGA7L1N6 GNDRF, 4 RFIN Band 8 C1 1nF (optional) AO, 3 L1 20nH AI, 5 PON PON, 6 RFOUT Band 8 VCC VCC, 2 C2 1nF (optional) GND, 1 BGA7L1N6_B8_Schematic.vsd Figure 3 Application Schematic BGA7L1N6 Table 11 Bill of Materials Name Part Type Package Manufacturer Function C1 (optional) Chip capacitor 0402 Various DC block 1) C2 (optional) ≥ 1nF2) 0402 Various RF bypass 3) L1 Chip inductor 0402 Murata LQW type Input matching N1 BGA7L1N6 TSNP-6-2 Infineon SiGe LNA 1) DC block might be realized with pre-filter in LTE applications 2) For data sheet characteristics 1nF used 3) RF bypass recommended to mitigate power supply noise A list of all application notes is available at http://www.infineon.com/gpslna.appnotes. Data Sheet 17 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 Application Information 3.3 Application Circuit Schematic Band 17 N1 BGA7L1N6 GNDRF, 4 RFIN Band 17 C1 1nF (optional) AO, 3 L1 22nH AI, 5 PON PON, 6 RFOUT Band 17 VCC VCC, 2 C2 1nF (optional) GND, 1 BGA7L1N6_B17_Schematic.vsd Figure 4 Application Schematic BGA7L1N6 Table 12 Bill of Materials Name Part Type Package Manufacturer Function C1 (optional) Chip capacitor 0402 Various DC block 1) C2 (optional) ≥ 1nF2) 0402 Various RF bypass 3) L1 Chip inductor 0402 Murata LQW type Input matching N1 BGA7L1N6 TSNP-6-2 Infineon SiGe LNA 1) DC block might be realized with pre-filter in LTE applications 2) For data sheet characteristics 1nF used 3) RF bypass recommended to mitigate power supply noise A list of all application notes is available at http://www.infineon.com/gpslna.appnotes. Data Sheet 18 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 Application Information BGA7x1N6_Application_Board.vsd Figure 5 Drawing of Application Board Vias   Vias   Ro4003, 0.2mm Copper 35µm FR4,0.8mm BGA7x1N6_application _board _sideview.vsd Figure 6 Data Sheet Application Board Cross-Section 19 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 Package Information Package Information Bottom view +0.025 0.375 -0.015 0.7 ±0.05 0.02 MAX. 0.2 ±0.05 1) 0.8 ±0.05 3 4 2 5 1 6 0.4 ±0.05 Pin 1 marking 1) Dimension applies to plated terminals Figure 7 1.1 ±0.05 Top view 0.2 ±0.05 1) 4 TSNP-6-2-PO V01 TSNP-6-2 Package Outline (top, side and bottom views) NSMD 0.4 0.4 0.25 0.25 0.4 0.4 0.25 0.25 (stencil thickness 100 µm) Copper Stencil apertures Solder mask TSNP-6-2-FP V01 Figure 8 Footprint Recommendation TSNP-6-2 1 Type code Monthly data code Pin 1 marking TSNP-6-2-MK V01 Figure 9 Data Sheet Marking Layout (top view) 20 Revision 3.1 (Min/Max), 2014-02-11 BGA7L1N6 Package Information 1.25 Pin 1 marking 8 0.5 2 0.85 TSNP-6-2-TP V01 Figure 10 Data Sheet Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000) 21 Revision 3.1 (Min/Max), 2014-02-11 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG
BGA 7L1N6 E6327 价格&库存

很抱歉,暂时无法提供与“BGA 7L1N6 E6327”相匹配的价格&库存,您可以联系我们找货

免费人工找货